Fourth International Caracas Conference on Devices, Circuits and Systems

(8:30 - 9:05 AM)  INAUGURAL CEREMONY - Welcome Addresses

(9:05 - 10:35) PLENARY SESSION - KEYNOTE ADDRESSES

 Presentation: Juin J. Liou  

1. 9:05-9:50
WIDE BAND GAP ELECTRONIC DEVICES
Michael S. Shur
Center for Integrated Electronics and Electronics Manufacturing
Rensselaer Polytechnic Institute, Troy, NY, USA
(Co-authors: R. Gaska, M. A. Khan, and G. Simin) A review of recent progress on GaN electronic devices, including GaN-based Schottky diodes, p-n junctions, piezoelectric and pyroelectric sensors, detectors of microwave radiation, and field effect transistors with emphasis on the special device designs that can utilize superior physical properties of the GaN-based material system. Examples of such devices include AlGaN-based MOSHFETs and MISHFETs and field effect transistors that are using a new approach of Strain Energy Band Engineering for controlling and improving the device properties.
2. 9:50-10:35
The emerging role of SiGe BiCMOS Technology in Wired and Wireless communications
David Harame
IBM Communications Research Development Center
IBM CRDC, ESSEX JCT, VT, USA
Data rates for wired and wireless communications are getting faster. In wired technology wavelength division multiplexing has greatly increased the total information a fiber can carry by paralleling the transmission using different wavelengths. The trend of increasing the data rate by a factor of 4 will come to end and a mixture of electrical and optical techniques used to extend the data handling capability. The trends in wireless communications are higher mobile data rates. The standards for wireless LANS and cellular telephones are merging. The two most appropriate technologies for communications are RFCMOS and SiGe BiCMOS technology. A full suite of passive elements as well as RF/Analog models and an RF/Analog Design kit with frequency and time domain tools. SiGe BiCMOS technology is particularly suitable for all communications applications and a wide variety of SiGe BiCMOS product communication circuits are presented. The technical requirements of these circuits are discussed with respect SiGe BiCMOS technology and it is pointed out that both superior active and passive devices are needed. The 0.18_m SiGe BiCMOS process and technology are discussed. Passives are extremely important for RF applications. A general discussion of how to optimize varactors, resistors, capacitors, and inductors for RF/Analog concludes the talk.

 


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